Experience & Capacity
At Masimo Semiconductor, our extensive MOCVD experience and capacity enable us to grow a wide range of GaAs and InP epitaxial structures to our customers’ designs. We recognize that time-to-market is critical to our customers’ success, so we strive to provide the fastest turnaround times possible. Our epitaxy scientists and engineers work closely with customers to develop and improve proprietary structures for specific applications.
MOCVD Materials
InP
InGaAs
InAlAs
InAs
InAsP
InGaAlAs
InGaAsP
GaAs
AlGaAs
InGaAlAs
GaAsP
AlGaP
AIGaAsP
InGaP
InAIP
InAIGaP
Typical Devices
Plasma filters
Laser power converters
LEDs/RCLEDs (visible to IR)
DH, QW, DFB lasers (visible to IR)
VCSELs (visible to IR)
Detectors
Thermophotovoltaics
QWIPs
HBTs – modulators
Photocathodes
PIN
SJ, MJ Solar cells, CPVs
HEMTs, FETs
High Power lasers
High Speed lasers
Typical Applications
Sensors
3D sensing
Infra-red cameras
Wireless communications
Wireless power conversion
Thermal power conversion
GPS
LiDAR
Automotive
Medical systems
Satellite systems
Solid state lasers
Fiber amplifiers
Displays
High Power lasers
High Speed lasers
Illumination
Pointers
Mouses
Cameras
Cell phones
Custom Applications Are Our Specialty
We can provide the following characterization data for our epitaxial wafers (or witness wafers, as appropriate).
- Nomarksi surface inspection, Surfscan defect count and haze
- Spectral reflectance
- Photoluminescence mapping, VCSEL mapping, wafer bowing mapping
- Hall and Polaron carrier concentration
- Double crystal x-ray diffraction for lattice constant and composition
SEM
RBS
SIMS
TEM
AFM
EDAX
Working with outside laboratory partners, we also routinely provide other measurements.
If your application is not listed, please contact us – we have a wealth of experience in other III-V structures and applications.
